Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction

نویسندگان

چکیده

This article characterizes the thermal behavior of a commercialized silicon carbide (SiC) power MOSFET module with special concerns on high-temperature operating conditions as well particular focuses SiC dies. A temperature-dependent Cauer-type model is proposed and extracted based offline finite-element simulations. Cauer able to reveal property each packaging layer, it suitable for thermal-profile prediction sufficient computational efficiency. Due properties die ceramic material, junction-heatsink resistance can be increased by more than 10% under (up 200 °C), which considerably worsen estimations its materials. Furthermore, experimental measurement transient impedance was conducted temperature variations (with virtual junction ranging from 60.5 °C 199.6 effectiveness fully validated.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Carbon nanotube array thermal interfaces for high-temperature silicon carbide devices

Multiwalled carbon nanotube (MWCNT) arrays have been directly synthesized from templated Fe2O3 nanoparticles on the C-face of 4H-SiC substrates by microwave plasma chemical vapor deposition (MPCVD), and the room-temperature thermal resistances of SiC-MWCNT-Ag interfaces at 69–345 kPa as well as the thermal resistances of SiCMWCNT-Ag interfaces up to 250 C (at 69 kPa) have been measured using a ...

متن کامل

Thermal Processing of Injection-Molded Silicon Carbide

Silicon carbide is the most important and versatile non-oxide ceramic. Powder injection molding (PIM) is a method of high-speed fabrication of complex near-net shapes of SiC and other powders. Green micro-machining (GMM) is used to extend the shaping capability of green ceramics and powder metallurgy to smaller feature sizes. Debinding—removal of organic additives—is the rate-limiting step in P...

متن کامل

Characterization of MOSFET temperature sensors for on-chip dynamic thermal measurements

This work analyses the performance of MOSFETs as a temperature sensor for the measurement of AC on-chip thermal signals caused by a power-dissipating circuit under test (CUT). First, we characterize how the CUT-sensor thermal coupling depends on the frequency of the AC thermal signal and the CUT-sensor distance. Second, we characterize how the thermal sensitivity of the sensor depends on the bi...

متن کامل

High temperature thermal energy

..................................................................................................................................................II CONTENT...................................................................................................................................................III FIGURES......................................................................................

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Journal of Emerging and Selected Topics in Power Electronics

سال: 2021

ISSN: ['2168-6777', '2168-6785']

DOI: https://doi.org/10.1109/jestpe.2020.2984586